JPH035658B2 - - Google Patents

Info

Publication number
JPH035658B2
JPH035658B2 JP57007118A JP711882A JPH035658B2 JP H035658 B2 JPH035658 B2 JP H035658B2 JP 57007118 A JP57007118 A JP 57007118A JP 711882 A JP711882 A JP 711882A JP H035658 B2 JPH035658 B2 JP H035658B2
Authority
JP
Japan
Prior art keywords
pattern
forming
gate
electrode
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57007118A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58123779A (ja
Inventor
Toshiki Ehata
Kenichi Kikuchi
Hideki Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP57007118A priority Critical patent/JPS58123779A/ja
Publication of JPS58123779A publication Critical patent/JPS58123779A/ja
Publication of JPH035658B2 publication Critical patent/JPH035658B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57007118A 1982-01-19 1982-01-19 シヨツトキゲ−ト電界効果トランジスタ及びその製造方法 Granted JPS58123779A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57007118A JPS58123779A (ja) 1982-01-19 1982-01-19 シヨツトキゲ−ト電界効果トランジスタ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57007118A JPS58123779A (ja) 1982-01-19 1982-01-19 シヨツトキゲ−ト電界効果トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS58123779A JPS58123779A (ja) 1983-07-23
JPH035658B2 true JPH035658B2 (en]) 1991-01-28

Family

ID=11657164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57007118A Granted JPS58123779A (ja) 1982-01-19 1982-01-19 シヨツトキゲ−ト電界効果トランジスタ及びその製造方法

Country Status (1)

Country Link
JP (1) JPS58123779A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58124278A (ja) * 1982-01-20 1983-07-23 Sumitomo Electric Ind Ltd ショットキゲート電界効果トランジスタの製造方法
US4792531A (en) * 1987-10-05 1988-12-20 Menlo Industries, Inc. Self-aligned gate process
US5143857A (en) * 1988-11-07 1992-09-01 Triquint Semiconductor, Inc. Method of fabricating an electronic device with reduced susceptiblity to backgating effects
US5384273A (en) * 1994-04-26 1995-01-24 Motorola Inc. Method of making a semiconductor device having a short gate length

Also Published As

Publication number Publication date
JPS58123779A (ja) 1983-07-23

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